Power MOSFET
NTR4171P
Power MOSFET
−30 V, −3.5 A, Single P−Channel, SOT−23
Features
• Low RDS(on) at Low Gate Voltage • Low Threshol...
Description
NTR4171P
Power MOSFET
−30 V, −3.5 A, Single P−Channel, SOT−23
Features
Low RDS(on) at Low Gate Voltage Low Threshold Voltage High Power and Current Handling Capability This is a Pb−Free Device
Applications
Load Switch Optimized for Battery and Load Management Applications in
Portable Equipment like Cell Phones, PDA’s, Media Players, etc.
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current (Note 1)
Steady State
Power Dissipation (Note 1)
t≤5s Steady State t≤5s
TA = 25°C TA = 85°C TA = 25°C
TA = 25°C
VDSS VGS ID
PD
−30 ±12 −2.2 −1.5 −3.5 0.48
1.25
V V A
W
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)
IDM −15.0 A
TJ, Tstg
−55 to 150
°C
IS −1.0 A
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Ambient − Steady State (Note 1)
RqJA
260 °C/W
Junction−to−Ambient − t ≤ 10 s (Note 1)
RqJA
100
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces)
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