TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC6000
High Speed Switching Applications DC-DC Converter Applications
2S...
TOSHIBA
Transistor Silicon
NPN Epitaxial Type
2SC6000
High Speed Switching Applications DC-DC Converter Applications
2SC6000
Unit: mm
High DC current gain: hFE = 250 to 400 (IC = 2.5 A) Low collector-emitter saturation: VCE (sat) = 0.18 V (max) High speed switching: tf = 13 ns (typ)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
Tc = 25°C
Junction temperature
Storage temperature range
VCBO VCEX VCEO VEBO
IC ICP IB
PC
Tj Tstg
120 120 50
6 7.0 10.0 0.5
20
150 −55 to 150
V V V V
A
A W °C °C
JEDEC
―
JEITA
―
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
1 2006-11-13
Free Datasheet http://www.datasheet4u.com/
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off c...