Power MOSFET
AUTOMOTIVE GRADE
PD - 97470
AUIRF3710Z AUIRF3710ZS
Features O Low On-Resistance O 175°C Operating Temperature O Fast S...
Description
AUTOMOTIVE GRADE
PD - 97470
AUIRF3710Z AUIRF3710ZS
Features O Low On-Resistance O 175°C Operating Temperature O Fast Switching O Fully Avalanche Rated O Repetitive Avalanche Allowed up to Tjmax
O Lead-Free, RoHS Compliant
O Automotive Qualified *
Description www.DataSheetS4pUe.ccoifmically designed for Automotive applications,
this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
HEXFET® Power MOSFET
D VDSS = 100V
RDS(on) = 18mΩ
G
ID = 59A
S
TO-220AB AUIRF3710Z
D2Pak AUIRF3710ZS
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Max.
Units
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC =...
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