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AUIRF3710ZS

International Rectifier

Power MOSFET

AUTOMOTIVE GRADE PD - 97470 AUIRF3710Z AUIRF3710ZS Features O Low On-Resistance O 175°C Operating Temperature O Fast S...


International Rectifier

AUIRF3710ZS

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AUTOMOTIVE GRADE PD - 97470 AUIRF3710Z AUIRF3710ZS Features O Low On-Resistance O 175°C Operating Temperature O Fast Switching O Fully Avalanche Rated O Repetitive Avalanche Allowed up to Tjmax O Lead-Free, RoHS Compliant O Automotive Qualified * Description www.DataSheetS4pUe.ccoifmically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 18mΩ G ID = 59A S TO-220AB AUIRF3710Z D2Pak AUIRF3710ZS Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Parameter Max. Units ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC =...




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