IRFPS3810PbF

l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free G Description The HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. PD - 95703 IRFPS3810PbF HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 0.009Ω S ID = 170A† Super-247™ Absolute Maximum Ratings ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Thermal Resistance RθJC RθCS RθJA www.irf.com Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Max. 170† 120† 670 580 3.8 ± 30 1350 100 58 2.3 -55 to + 175 300 (1.6mm from case ) Units A W W/°C V mJ A mJ V/ns °C Typ. ––– 0.24 ––– Max. 0.26 ––– 40 Units °C/W 1 9/10/04 IRFPS3810PbF Electrical Characteristics @ TJ = ...