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H5N2507P

High Speed Power Switching MOSFET

Description

H5N2507P 250V - 50A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 0.04  typ. (at ID = 25 A, VGS= 10 V, Ta = 25°C)  Low leakage current  High speed switching  Low gate charge  Built-in fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P ) 4 1 2 3 Absolute Maximum Ratings Item Drain to Source ...

Renesas Technology

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