C1730

INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification 2SC1730 DESCRIPTION ·Low Base Time Constant; rbb’ CC = 10 ps TYP. ·High Gain Bandwidth Product fT= 1100 MHz TYP. ·Low Output Capacitance; COB = 1.5 pF Max. APPLICATIONS ·Designed for TV VHF, UHF tuner oscillator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous Collector Power Dissipation PC @TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 50 mA 0.25 W 125 ℃ -55~125 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification 2SC1730 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 10mA ; IB= 1mA ICBO Collector Cutoff Current VCB= 12V; IE= 0 0.5 V 0.1 μA hFE DC Current Gain IC= 5mA ; VCE= 10V 40 180 fT Current-Gain—Bandwidth Product IE= -5mA ; VCE= 10V 800 1100 MHz COB Output Capacitance IE= 0 ; VCB= 10V; f= 1.0MHz 1.5 pF rbb’ CC Base Time Constant VCE= 10V,IE = -5mA,f = 31.9 MHz 10 15 ps ‹ hFE Classifications Marking M L K hFE 40-80 60-120 90-180 isc Website：www.iscsemi.cn 2 ...