K3510

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3510 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3510 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER PACKAGE 2SK3510 TO-220AB FEATURES Super low on-state resistance: RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID = 42 A) Low Ciss: Ciss = 8500 pF TYP. Built-in gate protection diode 2SK3510-S TO-262 2SK3510-ZJ 2SK3510-Z TO-263 TO-220SMDNote Note TO-220SMD package is produced only in Japan. (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 75 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 ID(DC) ID(pulse) ±83 ±332 A A Total Power Dissipation (TC = 25°C) PT1 125 W Total Power Dissipation (TA = 25°C) Channel Temperature PT2 Tch 1.5 W 150 °C (TO-262) Storage Temperature Tstg –55 to +150 °C Single Avalanche Current Note2 Single Avalanche Energy Note2 IAS 69 A EAS 450 mJ Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 35 V, RG = 25 Ω, VGS = 20 → 0 V (TO-263, TO-220SMD) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D15687EJ1V0DS00 (1st edition) Date Published...