RJK60S5DPQ-E0

RJK60S5DPQ-E0 600V - 20A - SJ MOS FET High Speed Power Switching Preliminary Datasheet R07DS0734EJ0200 Rev.2.00 Jan 23, 2013 Features  Superjunction MOSFET  Low on-resistance RDS(on) = 0.150  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)  High speed switching tf = 23 ns typ. (at ID = 10 A, VGS = 10 V, RL = 30 , Rg = 10 , Ta = 25C) Outline RENESAS Package code: PRSS0003ZE-A (Package name: TO-247) D 4 123 G S 1. Gate 2. Drain 3. Source 4. Drain Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Tc = 25C Tc = 100C Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy MOSFET dv/dt ruggedness Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. Limited by Tch max. 2. STch = 25C, Tch  150C 3. Value at Tj = 25C, VDS  480 V 4. Value at Tc = 25C Symbol VDSS VGSS IDNote1 IDNote1 ID Note1 (pulse) IDR Note1 IDR (pulse) Note1 IAPNote2 EARNote2 dv/dt Note3 Pch Note4 ch-c Tch Tstg Ratings 600 +30, 20 20 12.6 40 20 40 5 1.36 150 192.3 0.65 150 –55 to +150 (Ta = 25°C) Unit V V A A A A A A mJ V/ns W C/W C C R07DS0734EJ0200 Rev.2.00 Jan 23, 2013 Page 1 of 7 RJK60S5DPQ-E0 Preliminary Electrical Characteristics Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to sourc...