NP110N04PUK
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0570EJ0200 Rev.2.00
May 24, 2018
Description
The N...
NP110N04PUK
MOS FIELD EFFECT
TRANSISTOR
Preliminary Data Sheet
R07DS0570EJ0200 Rev.2.00
May 24, 2018
Description
The NP110N04PUK is N-channel MOS Field Effect
Transistor designed for high current switching applications.
Features
Super low on-state resistance RDS(on) = 1.4 m MAX. (VGS = 10 V, ID = 55 A)
Low Ciss: Ciss = 10500 pF TYP. (VDS = 25 V) Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No.
Lead Plating
Packing
NP110N04PUK-E1-AY *1 Pure Sn (Tin)
Tape 800 p/reel
Taping (E1 type)
NP110N04PUK-E2-AY *1
Taping (E2 type)
Note: *1 Pb-free (This product does not contain Pb in the external electrode)
Package TO-263 (MP-25ZP)
Absolute Maximum Ratings (TA = 25°C)
Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) *1, 3 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Repetitive Avalanche Current *2, 3 Repetitive Avalanche Energy *2, 3
Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAR EAR
Ratings 40 20
110 440 348 1.8 175 –55 to 175
72 518
Unit V V A A W W °C °C A mJ
Thermal Resistance
Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance
Rth(ch-C)*3 Rth(ch-A) *3
0.43 83.3
°C/W °C/W
Notes: *1 TC = 25°C, PW 10 s, Duty Cycle 1% *2 RG = 25 , VGS = 20 0 V *3 Not subject of production test. Verified by design/characterization.
R07DS0570EJ0200 Rev...