FDB075N15A

FDP075N15A / FDB075N15A — N-Channel PowerTrench® MOSFET March 2015 FDP075N15A / FDB075N15A N-Channel PowerTrench® MOSFET 150 V, 130 A, 7.5 m Features RDS(on) = 6.25 m (Typ.) @ VGS = 10 V, ID = 100 A Fast Switching Low Gate Charge High Performance Trench Technology for Extremely Low RDS(on) High Power and Current Handling Capability RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications Synchronous Rectification for ATX / Server / Telecom PSU Battery Protection Circuit Motor Drives and Uninterruptible Power Supplies Micro Solar Inverter D D GDS TO-220 G S D2-PAK G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS VGSS ID IDM EAS dv/dt PD Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation - DC - AC - Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed (TC = 25oC) - Derate Above 25oC (f > 1 Hz) (Note 1) (Note 2) (Note 3) TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds * Package limitation current is 120 A. Thermal Characteristics Symbol Parameter RJC RJA Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Ambient ...