16 GBIT (2G x 8 BIT) CMOS NAND E2PROM
TH58NYG4S0FBAID
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
16 GBIT (2G × 8 BIT) CMOS NAND E2PRO...
Description
TH58NYG4S0FBAID
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
16 GBIT (2G × 8 BIT) CMOS NAND E2PROM
DESCRIPTION
The TH58NYG4S0F is a single 1.8V 16 Gbit (18,152,947,712 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 232) bytes × 64 pages × 8192 blocks. The device has two 4328-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4328-byte increments. The Erase operation is implemented in a single block unit (256 Kbytes + 14.5 Kbytes: 4328 bytes × 64 pages).
The TH58NYG4S0F is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.
FEATURES
Organization
x8
Memory cell array 4328 × 256K × 8 × 2
Register
4328 × 8
Page size
4328 bytes
Block size
(256K + 14.5K) bytes
Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read
Mode control Serial input/output Command control
Number of valid blocks Min 8032 blocks Max 8192 blocks
Power supply VCC = 1.7V to 1.95V
Access time Cell arra...
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