Document
TH58NVG3S0HTA00
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
8 GBIT (1G × 8 BIT) CMOS NAND E2PROM
DESCRIPTION
The TH58NVG3S0HTA00 is a single 3.3V 8 Gbit (9,126,805,504 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 256) bytes × 64 pages × 4096blocks. The device has two 4352-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4352-byte increments. The Erase operation is implemented in a single block unit (256 Kbytes + 16 Kbytes: 4352 bytes × 64 pages).
The TH58NVG3S0HTA00 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.
FEATURES
• Organization
x8
Memory cell array 4352 × 128K × 8 × 2
Register
4352 × 8
Page size
4352 bytes
Block size
(256K + 16K) bytes
• Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read
• Mode control Serial input/output Command control
• Number of valid blocks Min 4016 blocks Max 4096 blocks
• Power supply VCC = 2.7V to 3.6V
• Access time Cell array to register 25 µs max Serial Read Cycle 25 ns min (CL=50pF)
• Program/Erase time Auto Page Program Auto Block Erase
300 µs/page typ. 2.5 ms/block typ.
• Operating current Read (25 ns cycle) Program (avg.) Erase (avg.) Standby
30 mA max. 30 mA max 30 mA max 100 µA max
• Package TSOP I 48-P-1220-0.50 (Weight: 0.54 g typ.)
• 8 bit ECC for each 512Byte is required.
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PIN ASSIGNMENT (TOP VIEW)
×8 NC NC NC NC NC NC RY / BY RE CE NC NC VCC VSS NC NC CLE ALE WE WP NC NC NC NC NC
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
PIN NAMES
TH58NVG3S0HTA00
×8 48 NC 47 NC 46 NC 45 NC 44 I/O8 43 I/O7 42 I/O6 41 I/O5 40 NC 39 NC 38 NC 37 VCC 36 VSS 35 NC 34 NC 33 NC 32 I/O4 31 I/O3 30 I/O2 29 I/O1 28 NC 27 NC 26 NC 25 NC
I/O1 to I/O8 CE WE RE CLE ALE WP
RY/BY VCC VSS NC
I/O port Chip enable Write enable Read enable Command latch enable Address latch enable Write protect Ready/Busy Power supply Ground No Connection
TH58NVG3S0HTA00
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BLOCK DIAGRAM
I/O1 to I/O8
CE CLE ALE WE
RE WP
RY / BY
I/O Control circuit
Logic control
RY / BY
Status register Address register Command register
Control circuit
TH58NVG3S0HTA00
VCC VSS
Column buffer Column decoder
Data register Sense amp
Memory cell array
Row address buffer decoder
Row address decoder
HV generator
ABSOLUTE MAXIMUM RATINGS
SYMBOL
RATING
VCC
Power Supply Voltage
VIN Input Voltage VI/O Input /Output Voltage
PD Power Dissipation
TSOLDER
Soldering Temperature (10 s)
TSTG TOPR
Storage Temperature Operating Temperature
VALUE −0.6 to 4.6 −0.6 to 4.6 −0.6 to VCC + 0.3 (≤ 4.6 V)
0.3 260 −55 to 150 0 to 70
CAPACITANCE *(Ta = 25°C, f = 1 MHz)
SYMB0L
PARAMETER
CONDITION
CIN Input
VIN = 0 V
COUT
Output
VOUT = 0 V
* This parameter is periodically sampled and is not tested for every device.
MIN
MAX 20 20
UNIT V V V W °C °C °C
UNIT pF pF
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TH58NVG3S0HTA00
VALID BLOCKS
SYMBOL
PARAMETER
MIN
TYP.
MAX
UNIT
NVB Number of Valid Blocks
4016
4096
Blocks
NOTE:
The device occasionally contains unusable blocks. Refer to Application Note (13) toward the end of this document. The first block (Block 0) is guaranteed to be a valid block at the time of shipment. The specification for the minimum number of valid blocks is applicable over lifetime The number of valid blocks is on the basis of single plane operations, and this may be decreased with two plane operations.
RECOMMENDED DC OPERATING CONDITIONS
SYMBOL
PARAMETER
MIN
TYP.
MAX
UNIT
VCC
Power Supply Voltage
2.7 3.6 V
VIH High Level input Voltage
Vcc x 0.8
VCC + 0.3
V
VIL Low Level Input Voltage
−0.3*
Vcc x 0.2
* −2 V (pulse width lower than 20 ns)
DC CHARACTERISTICS (Ta = 0 to 70℃, VCC = 2.7 to 3.6V)
SYMBOL
PARAMETER
IIL ILO ICCO1 ICCO2 ICCO3 ICCS
Input Leakage Current Output Leakage Current Serial Read Current Programming Current Erasing Current Standby Current
CONDITION
VIN = 0 V to VCC VOUT = 0 V to VCC CE = VIL, IOUT = 0 mA, tcycle = 25 ns
CE = VCC − 0.2 V, WP = 0 V/VCC
MIN
TYP.
MAX
±20 ±20 30 30 30 100
V
UNIT µA µA mA mA mA µA
VOH
High Level Output Voltage IOH = −0.1 mA
Vcc – 0.2
V
VOL Low Level Output Voltage IOL = 0.1 mA
IOL ( RY / BY )
Output current of RY / BY pin
VOL = 0.2 V
0.2 V 4 mA
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TH58NVG3S0HTA00
AC CHARACTERISTICS AND RECOMMENDED OPERATING CONDITIONS (Ta = 0 to 70℃, VCC = 2.7 to 3.6V)
SYMBOL
PARAMETER
tCLS tCLH tCS tCH tWP tALS tALH tDS tDH tWC tWH tWW tR.