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TC58NYG1S3HBAI4

Part Number	TC58NYG1S3HBAI4
Manufacturer	Toshiba
Description	2 GBIT (256M x 8 BIT) CMOS NAND E2PROM
Features	 Organization Memory cell array Register Page size Block size x8 2176  128K  8 2176  8 2176 bytes (128K  8K) bytes...
Published	Oct 19, 2015
Datasheet	TC58NYG1S3HBAI4 PDF File

Features

 Organization Memory cell array Register Page size Block size x8 2176  128K  8 2176  8 2176 bytes (128K  8K) bytes
 Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi P...

Similar Datasheet

TC58NYG1S3HBAI4 2 GBIT (256M x 8 BIT) CMOS NAND E2PROM - Toshiba
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