LRX102UT1G

LESHAN RADIO COMPANY, LTD. EPITAXIAL PLANAR NPN/PNP TRANSISTOR LRX102UT1G S-LRX102UT1G Features z Including two devices in USV. (UltraSuperminitypewith5leads.) z With Built-in bias resistors. z Simplify circuit design. z Reduce a quantity of parts and manufacturing process. SC−88A/SOT−353 z We declare that the material of product compliance with RoHS requirements. z S- Prefix for Automotive and Other Applications Requiring Unique Site EQUIVALENT CIRCUIT (TOP VIEW) 54 and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. EQUIVALENT CIRCUIT Q1 Q2 Q 1 OUT R1 IN R2 COMMON Q2 R1 IN OUT Q1 R1=47KΩ R2=47KΩ R2 COMMON Q2 R1=10KΩ R2=47KΩ 12 3 ORDERING INFORMATION Device Marking Shipping LRX102UT1G LRX102UT3G BM 3000 Tape & Reel BM 10000 Tape & Reel Q1 MAXIMUM RATING (Ta=25°C) CHARACTERISTIC Output Voltage Input Voltage Output Current SYMBOL VO VI IO RATING 50 40, -10 100 UNIT V V Q2 MAXIMUM RATING (Ta=25°C) CHARACTERISTIC Output Voltage Input Voltage Output Current Q1 Q2 MAXIMUM RATING (Ta=25°C) CHARACTERISTIC Power Dissipation Junction Temperature Storage Temperature Range * Total Raing. SYMBOL VO VI IO SYMBOL PD * Tj Tstg RATING -50 -30, 6 -100 RATING 200 150 -55 150 UNIT V V UNIT Rev.O 1/4 LESHAN RADIO COMPANY, LTD. Q1 ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL TEST CONDITION Output Cut-off Current IO(OFF) DC Current Gain GI Output Voltage VO(ON) Input Voltage (ON) VI(ON) Input Voltage (OFF) VI(OFF) ...