DatasheetsPDF.com

SiRA14DP Dataheets PDF



Part Number SiRA14DP
Manufacturers Vishay
Logo Vishay
Description N-Channel 30 V (D-S) MOSFET
Datasheet SiRA14DP DatasheetSiRA14DP Datasheet (PDF)

www.vishay.com SiRA14DP Vishay Siliconix N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) () MAX. 0.00510 at VGS = 10 V 0.00850 at VGS = 4.5 V ID (A) a 58 45 Qg (TYP.) 9.4 nC PowerPAK® SO-8 Single D D8 D7 D6 5 6.15 mm 1 Top View 5.15 mm 1 2S 3S 4S G Bottom View Ordering Information: SiRA14DP-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES • TrenchFET® Gen IV power MOSFET • 100 % Rg and UIS tested • Material categorization: For definitions of compliance www.vis.

  SiRA14DP   SiRA14DP


Document
www.vishay.com SiRA14DP Vishay Siliconix N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) () MAX. 0.00510 at VGS = 10 V 0.00850 at VGS = 4.5 V ID (A) a 58 45 Qg (TYP.) 9.4 nC PowerPAK® SO-8 Single D D8 D7 D6 5 6.15 mm 1 Top View 5.15 mm 1 2S 3S 4S G Bottom View Ordering Information: SiRA14DP-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES • TrenchFET® Gen IV power MOSFET • 100 % Rg and UIS tested • Material categorization: For definitions of compliance www.vishay.com/doc?99912 please see APPLICATIONS • High power density DC/DC • Synchronous rectification • Embedded DC/DC G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 300 μs) Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) d, e TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C VDS VGS ID IDM IS IAS EAS PD TJ, Tstg LIMIT 30 +20, -16 58 46 19.8 b, c 15.8 b, c 130 14.1 3.2 b, c 15 11.25 31.2 20 3.6 b, c 2.3 b, c -55 to 150 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient b, f Maximum Junction-to-Case (Drain) t  10 s Steady State SYMBOL RthJA RthJC TYPICAL 24 3 MAXIMUM 34 4 UNIT °C/W Notes a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 70 °C/W. S14-0157-Rev. D, 03-Feb-14 1 Document Number: 63784 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com SiRA14DP Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Drain-Source Breakdown Voltage (transient) c VDS VDSt VGS = 0 V, ID = 250 μA VGS = 0 V, ID(aval) = 15 A, ttransient = 50 ns 30 36 - V - VDS Temperature Coefficient VGS(th) Temperature Coefficient VDS/TJ VGS(th)/TJ ID = 250 μA - 20 - -4.6 - mV/° -C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 1.1 - 2.2 V Gate-Source Leakage IGSS VDS = 0 V, VGS = +20, -16 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55 °C - -1 μA - 10 On-State Drain Current a ID(on) VDS  5 V, VGS = 10 V 30 - -A Drain-Source On-State Resistance a RDS(on) VGS = 10 V, ID = 10 A VGS = 4.5 V, ID = 8 A - 0.00425 0.00510  - 0.00680 0.00850 Forward Transconductance a gfs VDS = 10 V, ID = 10 A - 65 -S Dynamic b Input Capacitance Output Capacitance Reverse Transfer Capacitance Crss/Ciss Ratio Total Gate Charge Gate-Source Charge Gate-Drain Charge Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Ciss Coss Crss Qg Qgs Qgd Qoss Rg td(on) tr td(off) tf td(on) tr td(off) tf VDS = 15 V, VGS = 0 V, f = 1 MHz VDS = 15 V, VGS = 10 V, ID = 10 A VDS = 15 V, VGS = 4.5 V, ID = 10 A VDS = 15 V, VGS = 0 V f = 1 MHz VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 10 V, Rg = 1  VDD = 15 V, RL = 1.5  ID  10 A, VGEN = 4.5 V, Rg = 1  - 1450 - - 445 - 38 pF - - 0.026 0.052 - 19.4 29 - 9.4 14 - 4 - nC - 1.8 - - 12.5 - 0.4 1.65 3.3  - 9 18 - 8 16 - 18 36 - 8 16 ns - 15 30 - 12 24 - 18 36 - 9 18 Continuous Source-Drain Diode Current Pulse Diode Forward Current a Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time IS ISM VSD trr Qrr ta tb TC = 25 °C IS = 3 A IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C - - 14.1 A - - 80 - 0.76 1.1 V - 24 48 ns - 14 28 nC - 12 - 12 ns - Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. TCASE = 25 °C. Expected voltage stress during 100 % UIS test. Production datalog is not available.  Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of .


FDMS3660S SiRA14DP RT9612A


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)