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SiRA14DP
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 30
RDS(on) () MAX. 0.00510 at VGS = 10 V 0.00850 at VGS = 4.5 V
ID (A) a 58 45
Qg (TYP.) 9.4 nC
PowerPAK® SO-8 Single D
D8 D7 D6
5
6.15 mm
1
Top View
5.15 mm
1 2S 3S 4S G Bottom View
Ordering Information: SiRA14DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• TrenchFET® Gen IV power MOSFET
• 100 % Rg and UIS tested
• Material categorization: For definitions of compliance www.vishay.com/doc?99912
please
see
APPLICATIONS • High power density DC/DC • Synchronous rectification • Embedded DC/DC
G
D
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current (t = 300 μs) Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) d, e
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
TC = 25 °C TA = 25 °C
L = 0.1 mH
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
VDS VGS
ID
IDM IS IAS EAS
PD
TJ, Tstg
LIMIT 30
+20, -16 58 46
19.8 b, c 15.8 b, c
130 14.1 3.2 b, c 15 11.25 31.2 20 3.6 b, c 2.3 b, c -55 to 150 260
UNIT V
A
mJ W °C
THERMAL RESISTANCE RATINGS
PARAMETER Maximum Junction-to-Ambient b, f Maximum Junction-to-Case (Drain)
t 10 s Steady State
SYMBOL RthJA RthJC
TYPICAL 24 3
MAXIMUM 34 4
UNIT °C/W
Notes
a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 70 °C/W.
S14-0157-Rev. D, 03-Feb-14
1
Document Number: 63784
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
SiRA14DP
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage Drain-Source Breakdown Voltage (transient) c
VDS VDSt
VGS = 0 V, ID = 250 μA VGS = 0 V, ID(aval) = 15 A, ttransient = 50 ns
30 36
-
V
-
VDS Temperature Coefficient VGS(th) Temperature Coefficient
VDS/TJ VGS(th)/TJ
ID = 250 μA
- 20 - -4.6
- mV/° -C
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 μA
1.1 -
2.2 V
Gate-Source Leakage
IGSS VDS = 0 V, VGS = +20, -16 V - - ± 100 nA
Zero Gate Voltage Drain Current
IDSS
VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55 °C
-
-1 μA
- 10
On-State Drain Current a
ID(on)
VDS 5 V, VGS = 10 V
30 -
-A
Drain-Source On-State Resistance a
RDS(on)
VGS = 10 V, ID = 10 A VGS = 4.5 V, ID = 8 A
- 0.00425 0.00510
- 0.00680 0.00850
Forward Transconductance a
gfs
VDS = 10 V, ID = 10 A
- 65
-S
Dynamic b
Input Capacitance Output Capacitance Reverse Transfer Capacitance Crss/Ciss Ratio
Total Gate Charge
Gate-Source Charge Gate-Drain Charge Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics
Ciss Coss Crss
Qg
Qgs Qgd Qoss Rg td(on)
tr td(off)
tf td(on)
tr td(off)
tf
VDS = 15 V, VGS = 0 V, f = 1 MHz
VDS = 15 V, VGS = 10 V, ID = 10 A VDS = 15 V, VGS = 4.5 V, ID = 10 A
VDS = 15 V, VGS = 0 V f = 1 MHz
VDD = 15 V, RL = 1.5 ID 10 A, VGEN = 10 V, Rg = 1
VDD = 15 V, RL = 1.5 ID 10 A, VGEN = 4.5 V, Rg = 1
- 1450
-
- 445 - 38
pF
-
- 0.026 0.052
- 19.4 29
- 9.4 14
- 4 - nC
- 1.8
-
- 12.5
-
0.4 1.65 3.3
- 9 18
- 8 16
- 18 36
- 8 16 ns
- 15 30
- 12 24
- 18 36
- 9 18
Continuous Source-Drain Diode Current Pulse Diode Forward Current a Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time
IS ISM VSD trr Qrr ta tb
TC = 25 °C
IS = 3 A
IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C
- - 14.1 A
- - 80
- 0.76 1.1 V
- 24 48 ns
- 14 28 nC
- 12 - 12
ns
-
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. TCASE = 25 °C. Expected voltage stress during 100 % UIS test. Production datalog is not available.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of .