SD882-02-TE12R

SD882-02-TE12R Schottky Barrier Diode Maximum Rating and Characteristics Maximum ratings (at Ta=25˚C unless otherwise specified.) Item Symbols Repetitive peak reverse voltage VRRM Average forward current IFAV Non-repetitive forward surge current Operating junction temperature Storage temperature IFSM Tj Tstg Conditions Square wave duty =1/2 Tl = 96 ˚C Sine wave, 10ms - - Electrical characteristics Item Forward voltage Reverse current Thermal resistance (at Ta=25˚C unless otherwise specified.) Symbols Conditions VF IF = 2.0 A IR VR =VRRM Rth(j-l) Junction to lead Mechanical characteristics Item Approximate mass Conditions - http://www.fujisemi.com FUJI Diode Ratings 20 2.0 70 125 -55 to+125 Units V A A ˚C ˚C Maximum 0.39 2.0 18 Units V mA ˚C/W Maximum 0.035 Units g 1 SD882-02-TE12R Outline Drawings [mm] Out view FUJI Diode http://www.fujisemi.com Marking Type Name Cathode Mark 2 unit:mm IF Forward Current (A) IR Reverse Current (mA) SD882-02-TE12R Forward Characteristic (typ.) 10 Tj= 25°C Tj=100°C 1 Tj=125°C 0.1 FUJI Diode http://www.fujisemi.com Reverse Characteristic (typ.) 102 Tj=125°C Tj=100°C 101 100 Tj= 25°C 10-1 WF Forward Power Dissipation (W) PR Reverse Power Dissipation (W) 0.01 0.0 0.1 0.2 0.3 VF Forward Voltage (V) 0.4 10-2 10 20 VR Reverse Voltage (V) Forward Power Dissipation (max.) Square wave λ=60° Square wave λ=120° 1.0 Sine wave λ=180° Square wave λ=180° DC 0.5 0.0 0.0 360° I0 λ 0.5 1.0 1.5 IF(AV) Average Forward...