IRF3805L-7PPbF

IRF3805S-7PPbF IRF3805L-7PPbF Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. HEXFET® Power MOSFET D VDSS = 55V G RDS(on) = 2.6mΩ‰ S S (Pin 2, 3, 5, 6, 7) G (Pin 1) ID = 160A D2Pak 7 Pin IRF3805S-7PPbF TO-263CA 7 Pin IRF3805L-7PPbF Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (See Fig. 9) Continuous Drain Current, VGS @ 10V (Package Limited) cPulsed Drain Current Maximum Power Dissipation Linear Derating Factor VGS EAS EAS (tested) IAR EAR Gate-to-Source Voltage dSingle Pulse Avalanche Energy (Thermally Limited) hSingle Pulse Avalanche Energy Tested Value cAvalanche Current gRepetitive Avalanche Energy TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Thermal Resistance RθJC RθCS RθJA RθJA Parameter jJunction-to-Case Ca...