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IRF3710SPBF Dataheets PDF



Part Number IRF3710SPBF
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet IRF3710SPBF DatasheetIRF3710SPBF Datasheet (PDF)

IRF3710SPbF IRF3710LPbF l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 23mΩ G ID = 57A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig.

  IRF3710SPBF   IRF3710SPBF


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