RJK4015DPK

RJK4015DPK 400V - 30A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 0.14  typ. (at ID = 15 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching Outline RENESAS Package code: PRSS0004ZE-A (Package name:TO-3P) Preliminary Datasheet R07DS0446EJ0200 (Previous: REJ03G1590-0100) Rev.2.00 Jun 21, 2012 1 2 3 D G S 1. Gate 2. Drain (Flange) 3. Source Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1 % 2. Value at Tc = 25C 3. STch = 25C, Tch  150C Symbol VDSS VGSS ID ID Note1 (pulse) IDR IDR Note1 (pulse) IAPNote3 EARNote3 Pch Note2 ch-c Tch Tstg Ratings 400 30 30 90 30 90 10 5.71 150 0.833 150 –55 to +150 (Ta = 25°C) Unit V V A A A A A mJ W C/W C C R07DS0446EJ0200 Rev.2.00 Jun 21, 2012 Page 1 of 6 RJK4015DPK Preliminary Electrical Characteristics Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge...