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FQA11N90_F109

Fairchild Semiconductor
Part Number FQA11N90_F109
Manufacturer Fairchild Semiconductor
Description N-Channel QFET MOSFET
Published Oct 18, 2015
Detailed Description FQA11N90_F109 — N-Channel QFET® MOSFET FQA11N90_F109 N-Channel QFET® MOSFET 900 V, 11.4 A, 960 mΩ Features • 11.4 A, 90...
Datasheet PDF File FQA11N90_F109 PDF File

FQA11N90_F109
FQA11N90_F109

Overview
FQA11N90_F109 — N-Channel QFET® MOSFET FQA11N90_F109 N-Channel QFET® MOSFET 900 V, 11.
4 A, 960 mΩ Features • 11.
4 A, 900 V, RDS(on) = 960 mΩ (Max.
) @ VGS = 10 V, ID = 5.
7 A • Low Gate Charge (Typ.
72 nC) • Low Crss (Typ.
30 pF) • 100% Avalanche Tested • RoHS compliant June 2014 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
These devices are suitable for switched mode power supplies, active power factor correction (PFC)...


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