RJL5012DPP-M0
Silicon N Channel MOS FET High Speed Power Switching
Features
Built-in fast recovery diode Low on-resistance
RDS(on) = 0.56 Ω typ. (at ID = 6 A, VGS = 10 V, Ta = 25°C) Low leakage current High speed switching
Outline
RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL)
1 23
G
Absolute Maximum Ratings
Item
Symbol
Drain to so...
