IRFB3256PbF

Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free PD - 97727 IRFB3256PbF HEXFET® Power MOSFET D VDSS RDS(on) typ. max. ID (Silicon Limited) 60V 2.7mΩ 3.4mΩ 206A S ID (Package Limited) 75A D DS G TO-220AB G Gate Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C ID @ TC = 25°C IDM Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) ™Pulsed Drain Current PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS dv/dt Gate-to-Source Voltage ePeak Diode Recovery TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Avalanche Characteristics dEAS Single Pulse Avalanche Energy (Thermally Limited) ÙIAR Avalanche Current ™EAR Repetitive Avalanche Energy Thermal Resistance Symbol RθJC RθCS RθJA Parameter ijJunction-to-Case Case-to-Sink, Flat Greased Surface Junction-to-Ambient D Drain S Source Max. 206 172 75 820 300 2.0 ± 20 3.3 -55 to + 175 300 (1.6mm from case) x x10lbf in (1.1N m) 340 See Fig. 14, 15, 22a, 22b Typ. ––– 0.50 ––– Max. 0.50 ––...