HEXFET Power MOSFET
Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repeti...
Description
Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications.
PD - 95332B
IRF2804PbF IRF2804SPbF IRF2804LPbF
HEXFET® Power MOSFET
D VDSS = 40V
G RDS(on) = 2.0mΩ
S ID = 75A
TO-220AB IRF2804PbF
D2Pak
TO-262
IRF2804SPbF IRF2804LPbF
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (See Fig. 9)
Continuous Drain Current, VGS @ 10V (Package Limited)
cPulsed Drain Current
Maximum Power Dissipation
VGS EAS EAS (tested) IAR EAR
Linear Derating Factor Gate-to-Source Voltage
dSingle Pulse Avalanche Energy (Thermally Limited) iSingle Pulse Avalanche Energy Tested Value cAvalanche Current hRepetitive Avalanche Energy
TJ TSTG
Operating Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC RθCS RθJA RθJA
Junction-to-Case Case-to-Sink, Fl...
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