NP110N055PUK

NP110N055PUK MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0591EJ0200 Rev.2.00 May 24, 2018 Description The NP110N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features  Super low on-state resistance RDS(on) = 1.75 m MAX. (VGS = 10 V, ID = 55 A)  Low Ciss: Ciss = 10700 pF TYP. (VDS = 25 V)  Designed for automotive application and AEC-Q101 qualified Ordering Information Part No. Lead Plating Packing NP110N055PUK-E1-AY *1 Pure Sn (Tin) Tape 800 p/reel Taping (E1 type) NP110N055PUK-E2-AY *1 Taping (E2 type) Note: *1 Pb-free (This product does not contain Pb in the external electrode) Package TO-263 (MP-25ZP) Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) *1, 3 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Repetitive Avalanche Current *2, 3 Repetitive Avalanche Energy *2, 3 Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAR EAR Ratings 55 20 110 440 348 1.8 175 –55 to 175 66 435 Unit V V A A W W °C °C A mJ Thermal Resistance Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C)*3 Rth(ch-A) *3 0.43 83.3 °C/W °C/W Notes: *1 TC = 25°C, PW  10 s, Duty Cycle  1% *2 RG = 25 , VGS = 20  0 V *3 Not subject of production test. Verified by design/characterization. R07DS0591EJ020...