Power MOSFET
AUTOMOTIVE GRADE
PD - 96396A
AUIRFS4010
Features
AUIRFSL4010
l Advanced Process Technology l Ultra Low On-Resistance...
Description
AUTOMOTIVE GRADE
PD - 96396A
AUIRFS4010
Features
AUIRFSL4010
l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified *
HEXFET® Power MOSFET
D VDSS
100V
RDS(on) typ.
3.9m:
:G max. 4.7m
S ID
180A
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
D
S G D2Pak AUIRFS4010
D
S D G TO-262 AUIRFSL4010
Absolute Maximum Ratings
G Gate
D Drain
S Source
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal
resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
ID @ TC = 25°...
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