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AUIRFS3006 Dataheets PDF



Part Number AUIRFS3006
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet AUIRFS3006 DatasheetAUIRFS3006 Datasheet (PDF)

AUTOMOTIVE GRADE Features ● Advanced Process Technology ● Ultra Low On-Resistance ● Dynamic dv/dt Rating ● 175°C Operating Temperature ● Fast Switching ● Repetitive Avalanche Allowed up to Tjmax ● Lead-Free, RoHS Compliant ● Automotive Qualified * D G S PD - 97713 AUIRFS3006 HEXFET® Power MOSFET VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) 60V 2.0m: 2.5m: c270A 195A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes th.

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AUTOMOTIVE GRADE Features ● Advanced Process Technology ● Ultra Low On-Resistance ● Dynamic dv/dt Rating ● 175°C Operating Temperature ● Fast Switching ● Repetitive Avalanche Allowed up to Tjmax ● Lead-Free, RoHS Compliant ● Automotive Qualified * D G S PD - 97713 AUIRFS3006 HEXFET® Power MOSFET VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) 60V 2.0m: 2.5m: c270A 195A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. D S G D2Pak AUIRFS3006 G Gate D Drain S Source Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Symbol ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Wire Bond Limited) dPulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage eSingle Pulse Avalanche Energy (Thermally Limited) ÃdAvalanche Current dRepetitive Avalanche Energy fPeak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. ™270 ™191 195 1080 375 2.5 ± 20 320 See Fig. 14, 15, 22a, 22b 10 -55 to + 175 300 Units A W W/°C V mJ A mJ V/ns °C (1.6mm from case) Mounting torque, 6-32 or M3 screw Thermal Resistance x x10lbf in (1.1N m) Symbol RθJC RθJA Parameter klJunction-to-Case jJunction-to-Ambient Typ. ––– ––– Max. 0.4 40 Units °C/W HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com 1 08/22/11 AUIRFS3006 Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS ΔV(BR)DSS/ΔTJ RDS(on) VGS(th) Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage 60 ––– ––– V VGS = 0V, ID = 250μA d––– 0.07 ––– V/°C Reference to 25°C, ID = 5mA g––– 2.0 2.5 mΩ VGS = 10V, ID = 170A 2.0 ––– 4.0 V VDS = VGS, ID = 250μA gfs Forward Transconductance RG Internal Gate Resistance 280 ––– ––– ––– 2.0 ––– S VDS = 25V, ID = 170A Ω IDSS Drain-to-Source Leakage Current ––– ––– 20 μA VDS = 60V, VGS = 0V IGSS Gate-to-Source Forward Leakage ––– ––– 250 VDS = 48V, VGS = 0V, TJ = 125°C ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions Qg Qgs Qgd Qsync td(on) tr td(off) tf Ciss Coss Crss Coss eff. (ER) Coss eff. (TR) Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Total Gate Charge Sync. (Qg - Qgd) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance (Energy Related) Effective Output Capacitance (Time Related) ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 200 37 60 140 16 182 118 189 8970 1020 534 1480 1920 300 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– nC ID = 170A gVDS =30V VGS = 10V ID = 170A, VDS =0V, VGS = 10V ns VDD = 39V ID = 170A gRG = 2.7Ω VGS = 10V pF VGS = 0V VDS = 50V ƒ = 1.0MHz, See Fig. 5 iVGS = 0V, VDS = 0V to 48V , See Fig. 11 hVGS = 0V, VDS = 0V to 48V Diode Characteristics Symbol Parameter IS Continuous Source Current (Body Diode) ISM Pulsed Source Current Ãd(Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current ton Forward Turn-On Time Min. Typ. Max. Units Conditions ™––– ––– 270 A MOSFET symbol D showing the ––– ––– 1080 A integral reverse G ––– ––– 1.3 p-n junction diode. gV TJ = 25°C, IS = 170A, VGS = 0V S ––– 44 ––– ns TJ = 25°C VR = 51V, ––– 48 ––– TJ = 125°C ––– 63 ––– nC TJ = 25°C gIF = 170A di/dt = 100A/μs ––– 77 ––– TJ = 125°C ––– 2.4 ––– A TJ = 25°C Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes:  Calculated co.


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