Document
AUTOMOTIVE GRADE
Features
● Advanced Process Technology ● Ultra Low On-Resistance ● Dynamic dv/dt Rating ● 175°C Operating Temperature ● Fast Switching ● Repetitive Avalanche Allowed up to Tjmax ● Lead-Free, RoHS Compliant ● Automotive Qualified *
D
G S
PD - 97713
AUIRFS3006
HEXFET® Power MOSFET
VDSS RDS(on)
typ. max.
ID (Silicon Limited)
ID (Package Limited)
60V
2.0m: 2.5m:
c270A
195A
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
D
S G D2Pak AUIRFS3006
G Gate
D Drain
S Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Symbol ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C
VGS EAS IAR EAR dv/dt TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
dPulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
eSingle Pulse Avalanche Energy (Thermally Limited) ÃdAvalanche Current dRepetitive Avalanche Energy fPeak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
270 191
195 1080 375 2.5 ± 20 320 See Fig. 14, 15, 22a, 22b
10 -55 to + 175
300
Units
A
W W/°C
V mJ A mJ V/ns
°C
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Thermal Resistance
x x10lbf in (1.1N m)
Symbol RθJC RθJA
Parameter
klJunction-to-Case jJunction-to-Ambient
Typ. ––– –––
Max. 0.4 40
Units °C/W
HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/
www.irf.com
1
08/22/11
AUIRFS3006
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS ΔV(BR)DSS/ΔTJ RDS(on) VGS(th)
Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage
60 ––– ––– V VGS = 0V, ID = 250μA
d––– 0.07 ––– V/°C Reference to 25°C, ID = 5mA g––– 2.0 2.5 mΩ VGS = 10V, ID = 170A
2.0 ––– 4.0 V VDS = VGS, ID = 250μA
gfs Forward Transconductance RG Internal Gate Resistance
280 ––– ––– ––– 2.0 –––
S VDS = 25V, ID = 170A Ω
IDSS Drain-to-Source Leakage Current
––– ––– 20 μA VDS = 60V, VGS = 0V
IGSS Gate-to-Source Forward Leakage
––– ––– 250
VDS = 48V, VGS = 0V, TJ = 125°C
––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
Qg Qgs Qgd Qsync td(on) tr td(off) tf Ciss Coss Crss Coss eff. (ER) Coss eff. (TR)
Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Total Gate Charge Sync. (Qg - Qgd) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related) Effective Output Capacitance (Time Related)
––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
200 37 60 140 16 182 118 189 8970 1020 534 1480 1920
300 –––
––– ––– ––– ––– ––– ––– ––– ––– ––– –––
nC ID = 170A
gVDS =30V
VGS = 10V ID = 170A, VDS =0V, VGS = 10V ns VDD = 39V ID = 170A
gRG = 2.7Ω
VGS = 10V pF VGS = 0V
VDS = 50V ƒ = 1.0MHz, See Fig. 5
iVGS = 0V, VDS = 0V to 48V , See Fig. 11 hVGS = 0V, VDS = 0V to 48V
Diode Characteristics
Symbol
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ãd(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IRRM Reverse Recovery Current ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 270 A MOSFET symbol
D
showing the ––– ––– 1080 A integral reverse
G
––– ––– 1.3
p-n junction diode.
gV TJ = 25°C, IS = 170A, VGS = 0V
S
––– 44 ––– ns TJ = 25°C
VR = 51V,
––– 48 –––
TJ = 125°C
––– 63 ––– nC TJ = 25°C
gIF = 170A
di/dt = 100A/μs
––– 77 –––
TJ = 125°C
––– 2.4 ––– A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Calculated co.