FDB035N10A

FDB035N10A — N-Channel PowerTrench® MOSFET FDB035N10A N-Channel PowerTrench® MOSFET 100 V, 214 A, 3.5 mΩ November 2013 Features RDS(on) = 3.0 mΩ ( Typ.) @ VGS = 10 V, ID = 75 A Fast Switching Speed Low Gate Charge, QG = 89 nC ( Typ.) High Performance Trench Technology for Extremely Low RDS(on) High Power and Current Handling Capability RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications Synchronous Rectification for ATX / Server / Telecom PSU Battery Protection Circuit Motor drives and Uninterruptible Power Supplies Micro Solar Inverter D D G S D2-PAK G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter FDB035N10A VDSS VGSS ID IDM EAS dv/dt PD Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - Continuous (TC = 25oC, Silicon Limited) - Continuous (TC = 100oC, Silicon Limited) - Continuous (TC = 25oC, Package Limited) - Pulsed (Note 1) Single Pulsed Avalanche Energy (Note 2) Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate Above 25oC (Note 3) 100 ±20 214* 151* 120 856 658 6.0 333 2.22 TJ, TSTG Operating and Storage Temperature Range -55 to +175 TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds 300 *Calculated continuous current based on maximum allowab...