IRF7769L1TRPBF

l RoHS Compliant, Halogen Free ‚ l Lead-Free (Qualified up to 260°C Reflow)  l Ideal for High Performance Isolated Converter Primary Switch Socket l Optimized for Synchronous Rectification l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling Compatible  l Compatible with existing Surface Mount Techniques  l Industrial Qualified IRF7769L1TRPbF DirectFET™ Power MOSFET ‚ Typical values (unless otherwise specified) VDSS VGS 100V min ±20V max Qg tot Qgd 200nC 110nC RDS(on) 2.8mΩ@ 10V Vgs(th) 2.7V S S D GS S S S SD S Applicable DirectFET Outline and Substrate Outline  SB SC M2 M4 L8 DirectFET™ ISOMETRIC L4 L6 L8 Description The IRF7769L1TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems. The IRF7769L1TRPbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses in the device coupled with the high level of thermal performance enables h...