Preliminary Data Sheet
NP89N055MUK, NP89N055NUK
MOS FIELD EFFECT TRANSISTOR
R07DS0600EJ0100 Rev.1.00
Jan 11, 2012
Des...
Preliminary Data Sheet
NP89N055MUK, NP89N055NUK
MOS FIELD EFFECT
TRANSISTOR
R07DS0600EJ0100 Rev.1.00
Jan 11, 2012
Description
These products are N-channel MOS Field Effect
Transistors designed for high current switching applications.
Features
Super low on-state resistance RDS(on) = 4.4 m MAX. (VGS = 10 V, ID = 45 A)
Low Ciss: Ciss = 4000 pF TYP. (VDS = 25 V) Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No. NP89N055MUK-S18-AY *1 NP89N055NUK-S18-AY *1
Lead Plating Pure Sn (Tin)
Packing Tube 50 p/tube
Note: *1 Pb-free (This product does not contain Pb in the external electrode)
Package TO-220 (MP-25K) TO-262 (MP-25SK)
Absolute Maximum Ratings (TA = 25°C)
Item
Symbol
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C) Drain Current (pulse) *1
ID(DC) ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature Repetitive Avalanche Current *2 Repetitive Avalanche Energy *2
Tstg IAR EAR
Notes: *1 TC = 25°C, PW 10 s, Duty Cycle 1% *2 RG = 25 , VGS = 20 0 V
Ratings 55 20 90
360 147 1.8 175 –55 to 175 33 108
Unit V V A A W W °C °C A mJ
Thermal Resistance
Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance
Rth(ch-C) Rth(ch-A)
1.02 °C/W 83.3 °C/W
R07DS0600EJ0100 Rev.1.00 Jan 11, 2012
Page 1 of 6
NP89N055MUK, NP89N055NUK
Electrical Characteristi...