Power MOSFETs
PD - 96331
AUTOMOTIVE GRADE
AUIRL1404Z
AUIRL1404ZS
Features
l Logic Level l Advanced Process Technology l Ultra Low ...
Description
PD - 96331
AUTOMOTIVE GRADE
AUIRL1404Z
AUIRL1404ZS
Features
l Logic Level l Advanced Process Technology l Ultra Low On-Resistance
AUIRL1404ZL
HEXFET® Power MOSFET
D V(BR)DSS
40V
l 175°C Operating Temperature
RDS(on) typ. 2.5mΩ
l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant
G
max. 3.1mΩ
lÃID (Silicon Limited) 180A
l Automotive Qualified *
S ID (Package Limited) 160A
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest
D
DD
processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other
DS G
DS G
DS G
TO-220AB AUIRL1404Z
D2Pak
TO-262
AUIRL1404ZS AUIRL1404ZL
applications. Absolute Maximum Ratings
G Gate
D Drain
S Source
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board...
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