AUIRL1404Z

PD - 96331 AUTOMOTIVE GRADE AUIRL1404Z AUIRL1404ZS Features l Logic Level l Advanced Process Technology l Ultra Low On-Resistance AUIRL1404ZL HEXFET® Power MOSFET D V(BR)DSS 40V l 175°C Operating Temperature RDS(on) typ. 2.5mΩ l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant G max. 3.1mΩ lÃID (Silicon Limited) 180A l Automotive Qualified * S ID (Package Limited) 160A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest D DD processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other DS G DS G DS G TO-220AB AUIRL1404Z D2Pak TO-262 AUIRL1404ZS AUIRL1404ZL applications. Absolute Maximum Ratings G Gate D Drain S Source Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board...