IRFU4620PbF

PD -96207A IRFR4620PbF IRFU4620PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free HEXFET® Power MOSFET D VDSS RDS(on) typ. max. 200V 64m: 78m: S ID 24A DD S G DPak IRFR4620PbF S D G IPAK IRFU4620PbF G Gate Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C IDM Continuous Drain Current, VGS @ 10V cPulsed Drain Current PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS dv/dt Gate-to-Source Voltage ePeak Diode Recovery TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Avalanche Characteristics EAS (Thermally limited) IAR EAR dSingle Pulse Avalanche Energy cAvalanche Current cRepetitive Avalanche Energy Thermal Resistance Symbol RθJC RθJA Parameter jJunction-to-Case iJunction-to-Ambient (PCB Mount) RθJA Junction-to-Ambient ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet. Notes  through ˆ are on page 11 www.irf.com D Drain Max. 24 17 100 144 0.96 ± 20 54 -55 to + 175 300 113 See Fig. 14, 15, 22a, 22b, Typ. ––– ––– ––– Max. 1.045 50 110 S Source Units A...