HY628400

HY628400 Series 512Kx8bit CMOS SRAM DESCRIPTION The HY628400 is a high-speed, low power and 4M bits CMOS SRAM organized as 524,288 words by 8 bits. The HY628400 uses Hyundai's high performance twin tub CMOS process technology and was designed for high-speed and low power circuit technology. It is particulary well suited for use in high-density and low power system applications. This device has a data retention mode that guarantees data to remain valid at the minimum power supply voltage of 2.0V. Product Voltage Speed Operation No. (V) (ns) Current(mA) HY628400 5.0 55/70/85 10 Note 1. Normal : Normal Temperature 2. Current value are max. FEATURES Fully static operation and Tri-state outputs TTL compatible inputs and outputs Low power consumption Battery backup(L/LL-part) - 2.0V(min) data retention Standard pin configuration - 32pin 525mil SOP - 32pin 400mil TSOP-II (Standard and Reversed) Standby Current(uA) L LL 100 30 Temperature (°C) 0~70(Normal) PIN CONNECTION A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O1 I/O2 I/O3 Vss 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 SOP 32 Vcc A18 1 31 30 29 A15 A17 /WE A16 A14 A12 2 3 4 28 A13 A7 5 27 A8 A6 6 26 25 A9 A11 24 /OE A5 7 A4 8 A3 9 23 22 21 20 A10 /CS I/O8 I/O7 A2 A1 A0 I/O1 10 11 12 13 19 I/O6 I/O2 14 18 17 I/O5 I/O3 I/O4 Vss 15 16 32 Vcc Vcc 32 31 A15 A15 31 30 A17 A17 30 29 /WE /WE 29 28 A13 A13 28 27 A8 A8 27 26 25 24 A9 A11 /OE A9 A11 /OE 26 25 24 23 22 A10 /CS A10 /CS ...