IRFL4310PbF

PD - 95144 IRFL4310PbF HEXFET® Power MOSFET l Surface Mount l Dynamic dv/dt Rating l Fast Switching l Ease of Paralleling l Advanced Process Technology l Ultra Low On-Resistance l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. G D VDSS = 100V RDS(on) = 0.20Ω ID = 1.6A S The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application. Absolute Maximum Ratings S O T -2 2 3 Parameter ID @ TA = 25°C Continuous Drain Current, VGS @ 10V** ID @ TA = 25°C Continuous Drain Current, VGS @ 10V* ID @ TA = 70°C IDM Continuous Drain Current, VGS @ 10V* Pulsed Drain Current  PD @TA = 25°C PD @TA = 25°C Power Dissipation (PCB Mount)** Power Dissipation (PCB Mount)* Linear Derating Factor (PCB Mount)* VGS Gate-to-Source Voltage EAS IAR EAR dv/dt Single Pulse Avalanche Energy‚ Avalanche Current Repe...