Document
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP110N055PUG
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The NP110N055PUG is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP110N055PUG
TO-263 (MP-25ZP)
FEATURES
• Channel temperature 175 degree rating • Super low on-state resistance
RDS(on) = 2.4 mΩ MAX. (VGS = 10 V, ID = 55 A) • Low Ciss: Ciss = 17100 pF TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
55
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1
ID(DC) ID(pulse)
±110 ±440
Total Power Dissipation (TA = 25°C)
PT1 1.8
Total Power Dissipation (TC = 25°C)
PT2 288
Channel Temperature
Tch 175
Storage Temperature
Tstg −55 to +175
Repetitive Avalanche Current Note2
IAR 66
Repetitive Avalanche Energy Note2
EAR 435
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Tch ≤ 150°C, VDD = 28 V, RG = 25 Ω, VGS = 20 → 0 V
V V A A W W °C °C A mJ
(TO-263)
THERMAL RESISTANCE
Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance
Rth(ch-C) Rth(ch-A)
0.52 83.3
°C/W °C/W
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Document No. D16853EJ1V0DS00 (1st edition) Date Published September 2004 NS CP(K) Printed in Japan
2004
NP110N055PUG
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS VDS = 55 V, VGS = 0 V
Gate Leakage Current Gate to Source Threshold Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Note
IGSS VGS(th) | yfs | RDS(on)
VGS = ±20 V, VDS = 0 V VDS = VGS, ID = 250 µA VDS = 10 V, ID = 55 A VGS = 10 V, ID = 55 A
Input Capacitance
Ciss VDS = 25 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss f = 1 MHz
Turn-on Delay Time
td(on)
VDD = 28 V, ID = 55 A
Rise Time
tr VGS = 10 V
Turn-off Delay Time
td(off)
RG = 0 Ω
Fall Time
tf
Total Gate Charge
QG VDD = 44 V
Gate to Source Charge
QGS
VGS = 10 V
Gate to Drain Charge Body Diode Forward Voltage Note
QGD VF(S-D)
ID = 110 A IF = 110 A, VGS = 0 V
Reverse Recovery Time
trr IF = 110 A, VGS = 0 V
Reverse Recovery Charge
Note Pulsed
Qrr di/dt = 100 A/µs
MIN. TYP. MAX. UNIT
1 µA
±100 nA
2.0 3.0 4.0
V
42 83
S
1.9 2.4 mΩ
17100 25700 pF
1120 1680 pF
725 1310 pF
63 140 ns
201 510 ns
131 270 ns
19 50 ns
251 380 nC
63 nC
81 nC
0.9 1.5
V
58 ns
87 nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T. RG = 25 Ω
PG. VGS = 20 → 0 V
50 Ω
L VDD
BVDSS
ID VDD
IAS
VDS
Starting Tch TEST CIRCUIT 3 GATE CHARGE
D.U.T.
RG PG.
VGS 0
τ
τ = 1 µs Duty Cycle ≤ 1%
RL VDD
VGS
VGS
Wave Form
10% 0
VDS
90%
VDS
VDS
Wave Form
0
td(on)
VGS 90%
90% 10% 10%
tr td(off) tf
ton toff
D.U.T. IG = 2 mA
PG. 50 Ω
RL VDD
2 Data Sheet D16853EJ1V0DS
NP110N055PUG
dT - Percentage of Rated Power - %
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120
100
80
60
40
20
0 0 25 50 75 100 125 150 175 TC - Case Temperature - °C
PT - Total Power Dissipation - W
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 300
250
200
150
100
50
0 0 25 50 75 100 125 150 175 TC - Case Temperature - °C
ID - Drain Current - A
FORWARD BIAS SAFE OPERATING AREA
1000
ID(pulse) = 440 A
PW = 100 µs
100 10
ID(DC) = 110 A
1 ms
RDS(on) Limited (at VGS = 10 V)
DC
1 10 ms
TC = 25°C Single pulse
0.1
0.1
1
10
VDS - Drain to Source Voltage - V
100
rth(t) - Transient Thermal Resistance - °C/W
1000 100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH Rth(ch-A) = 83.3°C/W
10 1 Rth(ch-C) = 0.52°C/W
0.1
0.01
0.001
100 µ
1m
10 m
100 m
1
10
PW - Pulse Width - s
Single pulse 100 1000
Data Sheet D16853EJ1V0DS
3
NP110N055PUG
ID - Drain Current - A
VGS(th) - Gate to Source Threshold Voltage - V
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
500
400
300
200
100
0 0
VGS = 10 V Pulsed
0.2 0.4 0.6 0.8 1 VDS - Drain to Source Voltage - V
1.2
GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE
4
3
2
1
0 -100
VDS = VGS ID = 250 µA
-50 0 50 100 150 Tch - Channel Temperature - °C
200
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
5 Pulsed
4
3 VGS = 10 V
2
1
0 1 10 100 1000 ID - Drain Current - A
RDS(on) - Drain to Source On-state Resistance - mΩ
| yfs | - Forward Transfer Admittance - S
ID - Drain Current - A
FORWARD TRANSFER CHARACTERISTICS
1000 100 10 1 0.1 0.01
VDS = 10 V Pulsed
TA = −55°C −25°C 25°C 85°C 125°C 150°C 175°C
0.001 0
12345 VGS - Gate to Source Voltage - V
6
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
1000
VDS = 10 V Pulsed
100
TA = −55°C 25°C
85°C
125°C
175°C
10
1 1 10 100 .