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NP110N055PUG Dataheets PDF



Part Number NP110N055PUG
Manufacturers Renesas
Logo Renesas
Description N-CHANNEL POWER MOS FET
Datasheet NP110N055PUG DatasheetNP110N055PUG Datasheet (PDF)

DATA SHEET MOS FIELD EFFECT TRANSISTOR NP110N055PUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP110N055PUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER PACKAGE NP110N055PUG TO-263 (MP-25ZP) FEATURES • Channel temperature 175 degree rating • Super low on-state resistance RDS(on) = 2.4 mΩ MAX. (VGS = 10 V, ID = 55 A) • Low Ciss: Ciss = 17100 pF TYP. ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source V.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR NP110N055PUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP110N055PUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER PACKAGE NP110N055PUG TO-263 (MP-25ZP) FEATURES • Channel temperature 175 degree rating • Super low on-state resistance RDS(on) = 2.4 mΩ MAX. (VGS = 10 V, ID = 55 A) • Low Ciss: Ciss = 17100 pF TYP. ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 55 Gate to Source Voltage (VDS = 0 V) VGSS ±20 Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 ID(DC) ID(pulse) ±110 ±440 Total Power Dissipation (TA = 25°C) PT1 1.8 Total Power Dissipation (TC = 25°C) PT2 288 Channel Temperature Tch 175 Storage Temperature Tstg −55 to +175 Repetitive Avalanche Current Note2 IAR 66 Repetitive Avalanche Energy Note2 EAR 435 Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Tch ≤ 150°C, VDD = 28 V, RG = 25 Ω, VGS = 20 → 0 V V V A A W W °C °C A mJ (TO-263) THERMAL RESISTANCE Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 0.52 83.3 °C/W °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D16853EJ1V0DS00 (1st edition) Date Published September 2004 NS CP(K) Printed in Japan 2004 NP110N055PUG ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS Zero Gate Voltage Drain Current IDSS VDS = 55 V, VGS = 0 V Gate Leakage Current Gate to Source Threshold Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Note IGSS VGS(th) | yfs | RDS(on) VGS = ±20 V, VDS = 0 V VDS = VGS, ID = 250 µA VDS = 10 V, ID = 55 A VGS = 10 V, ID = 55 A Input Capacitance Ciss VDS = 25 V Output Capacitance Coss VGS = 0 V Reverse Transfer Capacitance Crss f = 1 MHz Turn-on Delay Time td(on) VDD = 28 V, ID = 55 A Rise Time tr VGS = 10 V Turn-off Delay Time td(off) RG = 0 Ω Fall Time tf Total Gate Charge QG VDD = 44 V Gate to Source Charge QGS VGS = 10 V Gate to Drain Charge Body Diode Forward Voltage Note QGD VF(S-D) ID = 110 A IF = 110 A, VGS = 0 V Reverse Recovery Time trr IF = 110 A, VGS = 0 V Reverse Recovery Charge Note Pulsed Qrr di/dt = 100 A/µs MIN. TYP. MAX. UNIT 1 µA ±100 nA 2.0 3.0 4.0 V 42 83 S 1.9 2.4 mΩ 17100 25700 pF 1120 1680 pF 725 1310 pF 63 140 ns 201 510 ns 131 270 ns 19 50 ns 251 380 nC 63 nC 81 nC 0.9 1.5 V 58 ns 87 nC TEST CIRCUIT 1 AVALANCHE CAPABILITY TEST CIRCUIT 2 SWITCHING TIME D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V 50 Ω L VDD BVDSS ID VDD IAS VDS Starting Tch TEST CIRCUIT 3 GATE CHARGE D.U.T. RG PG. VGS 0 τ τ = 1 µs Duty Cycle ≤ 1% RL VDD VGS VGS Wave Form 10% 0 VDS 90% VDS VDS Wave Form 0 td(on) VGS 90% 90% 10% 10% tr td(off) tf ton toff D.U.T. IG = 2 mA PG. 50 Ω RL VDD 2 Data Sheet D16853EJ1V0DS NP110N055PUG dT - Percentage of Rated Power - % TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 TC - Case Temperature - °C PT - Total Power Dissipation - W TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 300 250 200 150 100 50 0 0 25 50 75 100 125 150 175 TC - Case Temperature - °C ID - Drain Current - A FORWARD BIAS SAFE OPERATING AREA 1000 ID(pulse) = 440 A PW = 100 µs 100 10 ID(DC) = 110 A 1 ms RDS(on) Limited (at VGS = 10 V) DC 1 10 ms TC = 25°C Single pulse 0.1 0.1 1 10 VDS - Drain to Source Voltage - V 100 rth(t) - Transient Thermal Resistance - °C/W 1000 100 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH Rth(ch-A) = 83.3°C/W 10 1 Rth(ch-C) = 0.52°C/W 0.1 0.01 0.001 100 µ 1m 10 m 100 m 1 10 PW - Pulse Width - s Single pulse 100 1000 Data Sheet D16853EJ1V0DS 3 NP110N055PUG ID - Drain Current - A VGS(th) - Gate to Source Threshold Voltage - V DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 500 400 300 200 100 0 0 VGS = 10 V Pulsed 0.2 0.4 0.6 0.8 1 VDS - Drain to Source Voltage - V 1.2 GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE 4 3 2 1 0 -100 VDS = VGS ID = 250 µA -50 0 50 100 150 Tch - Channel Temperature - °C 200 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 5 Pulsed 4 3 VGS = 10 V 2 1 0 1 10 100 1000 ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - mΩ | yfs | - Forward Transfer Admittance - S ID - Drain Current - A FORWARD TRANSFER CHARACTERISTICS 1000 100 10 1 0.1 0.01 VDS = 10 V Pulsed TA = −55°C −25°C 25°C 85°C 125°C 150°C 175°C 0.001 0 12345 VGS - Gate to Source Voltage - V 6 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 1000 VDS = 10 V Pulsed 100 TA = −55°C 25°C 85°C 125°C 175°C 10 1 1 10 100 .


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