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AUIRFS8408 Dataheets PDF



Part Number AUIRFS8408
Manufacturers International Rectifier
Logo International Rectifier
Description Power MOSFET
Datasheet AUIRFS8408 DatasheetAUIRFS8408 Datasheet (PDF)

AUTOMOTIVE GRADE AUIRFS8408 AUIRFSL8408 Features l Advanced Process Technology l New Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction op.

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AUTOMOTIVE GRADE AUIRFS8408 AUIRFSL8408 Features l Advanced Process Technology l New Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this product an extremely efficient and reliable device for use in Automotive and wide variety of other applications. Applications l Electric Power Steering (EPS) l Battery Switch l Start/Stop Micro Hybrid l Heavy Loads l SMPS G D S G Gate HEXFET® Power MOSFET VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) 40V 1.3mΩ 1.6mΩ c317A 195A DD S G D2Pak AUIRFS8408 S D G TO-262 AUIRFSL8408 D Drain S Source Ordering Information Base part number Package Type Standard Pack Complete Part Number Form Quantity AUIRFSL8408 TO-262 Tube 50 AUIRFSL8408 AUIRFS8408 D2Pak Tube 50 AUIRFS8408 Tape and Reel Left 800 AUIRFS8408TRL Tape and Reel Right 800 AUIRFS8408TRR Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Symbol ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) dContinuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current ™Max. 317 ™224 195 l1270 Units A PD @TC = 25°C Maximum Power Dissipation 294 W Linear Derating Factor 1.96 W/°C VGS Gate-to-Source Voltage ± 20 V TJ Operating Junction and -55 to + 175 TST G Storage Temperature Range °C Soldering Temperature, for 10 seconds (1.6mm from case) 300 Avalanche Characteristics eEAS (Thermally limited) Single Pulse Avalanche Energy EAS (tested) IAR EAR ÃeSingle Pulse Avalanche Energy Tested Value dAvalanche Current dRepetitive Avalanche Energy Thermal Resistance Symbol RθJC RθJA kParameter Junction-to-Case jJunction-to-Ambient (PCB Mount) 490 800 See Fig. 14, 15, 24a, 24b Typ. ––– ––– Max. 0.51 40 mJ A mJ Units °C/W HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ 1 www.irf.com © 2013 International Rectifier April 25, 2013 AUIRFS/SL8408 Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter V(BR)DSS Drain-to-Source Breakdown Voltage ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage RG Internal Gate Resistance Dynamic @ TJ = 25°C (unless otherwise specified) Symbol Parameter gfs Forward Transconductance Qg Total Gate Charge Qgs Gate-to-Source Charge Qgd Gate-to-Drain ("Miller") Charge Qsync Total Gate Charge Sync. (Qg - Qgd) td(on) Turn-On Delay Time tr Rise Time td(of f ) Turn-Off Delay Time tf Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss eff. (ER) Effective Output Capacitance (Energy Related) Coss eff. (TR) Effective Output Capacitance (Time Related) Diode Characteristics Symbol Parameter IS Continuous Source Current (Body Diode) ISM Pulsed Source Current c(Body Diode) VSD dv/dt Diode Forward Voltage fPeak Diode Recovery trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current Min. Typ. 40 ––– ––– 0.032 ––– 1.3 2.2 3.0 ––– ––– ––– ––– ––– ––– ––– ––– ––– 2.1 Max. ––– ––– 1.6 3.9 1.0 150 100 -100 ––– Units Conditions dV VGS = 0V, ID = 250μA V/°C Reference to 25°C, ID = 5mA mΩ VGS = 10V, ID = 100A V VDS = VGS, ID = 250μA μA VDS = 40V, VGS = 0V VDS = 40V, VGS = 0V, TJ = 125°C nA VGS = 20V VGS = -20V Ω Min. Typ. Max. Units Conditions 211 ––– ––– S VDS = 10V, ID = 100A ––– 216 324 ID = 100A ––– 51 ––– 77 g––– ––– nC VDS =20V VGS = 10V ––– 139 ––– ID = 100A, VDS =0V, VGS = 10V ––– 29 ––– VDD = 26V g––– 202 ––– 108 ––– ––– ns ID = 100A RG = 2.4Ω ––– 119 ––– VGS = 10V ––– 10820 ––– VGS = 0V ––– 1540 ––– VDS = 25V ––– 1140 ––– pF ƒ = 1.0 MHz, See Fig. 5 ––– 1880 ––– 2208 ––– ––– hVGS = 0V, VDS =0V to 32V See Fig. 11 iVGS = 0V, VDS = 0V to .


IRF6646TRPbF AUIRFS8408 AUIRFSL8408


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