LBSS123LT3G

LESHAN RADIO COMPANY, LTD. N-CHANNEL POWER MOSFET LBSS123LT1G FEATURE ƽ Pb-Free Package is available. ƽ S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LBSS123LT1G S-LBSS123LT1G SA 3000/Tape&Reel LBSS123LT3G S-LBSS123LT3G SA 10000/Tape&Reel MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage – Continuous – Non–repetitive (tp ≤ 50 µs) Drain Current Continuous (Note 1.) Pulsed (Note 2.) Symbol VDSS VGS VGSM ID IDM Value 100 ±20 ±40 0.17 0.68 Unit Vdc Vdc Vpk Adc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR–5 Board (Note 3.) TA = 25°C Derate above 25°C PD 225 mW 1.8 mW/°C Thermal Resistance, Junction to RqJA 556 °C/W Ambient Junction and Storage Temperature TJ, Tstg –55 to +150 °C 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Width v 300 ms, Duty Cycle v 2.0%. 3. FR–5 = 1.0  0.75  0.062 in. LBSS123LT1G S-LBSS123LT1G 3 1 2 SOT-23 Drain 3 1 Gate 2 Source Rev .A 1/4 LESHAN RADIO COMPANY, LTD. LBSS123LT1G , S-LBSS123LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0, ID = 250 µAdc) V(BR)DSS 100 – – Vdc Zero Gate Voltage Drain Current (VGS = 0, VDS = 100 Vdc) TJ = 25°C ...