L2N7002WT3G

LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–323 ●FEATURES 1)We declare that the material of product compliant with RoHS requirements and Halogen Free. 2)ESD Protected:1000V 3)S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ●ORDERING INFORMATION Device Marking L2N7002WT1G 6C L2N7002WT3G 6C ●MAXIMUM RATINGS(Ta = 25℃) Rating Drain–Source Voltage Drain–Gate Voltage (RGS = 1.0 MΩ) Shipping 3000/Tape&Reel 10000/Tape&Reel Symbol VDSS VDGR Value 60 60 Drain Current – Continuous TC = 25C (Note 1.) TC = 100C (Note 1.) – Pulsed (Note 2.) Gate–Source Voltage – Continuous – Non–repetitive (tp  50 s) ID ID IDM VGS VGSM ±115 ±75 ±800 ±20 ±40 L2N7002WT1G S-L2N7002WT1G 3 1 2 SOT– 323 (SC-70) Unit Vdc Vdc mAdc Simplified Schematic Gate 1 3 Drain Source 2 Vdc Vpk (Top View) ●THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR–5 Board (Note 3.) TA = 25C PD 225 mW Derate above 25C 1.8 mW/C Thermal Resistance, Junction to Ambient RθJA 556 C/W Total Device Dissipation Alumina Substrate,(Note 4.) TA = 25C Derate above 25C PD 300 mW 2.4 mW/C Thermal Resistance, Junction to Ambient Rθ JA 417 C/W Junction and Storage Temperature TJ, Tstg -55 to +150 C 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2...