LMBT3906DW1T3G

LESHAN RADIO COMPANY, LTD. Dual Bias Resistor Transistors PNP Silicon The LMBT3906DW1T1G device is a spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363 six–leaded surface mount package. By putting two discrete devices in one package , this device is ideal for low–power surface mount applications where board space is at a premium. ●FEATURES 1）hFE, 100–300 2）Low VCE(sat),≦0.4 V 3）Simplifies Circuit Design 4）Reduces Board Space 5）Reduces Component Count 6）We declare that the material of product compliant with RoHS requirements and Halogen Free. 7）S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. LMBT3906DW1T1G S-LMBT3906DW1T1G 65 4 1 2 3 SOT-363 (3) (2) (1) Q1 Q2 (4) (5) (6) ●DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT3906DW1T1G A2 3000/Tape&Reel LMBT3906DW1T3G A2 10000/Tape&Reel ●MAXIMUM RATINGS(Ta = 25℃) Parameter Symbol Collector–Emitter Voltage VCEO Collector–Base Voltage VCBO Emitter–Base Voltage VEBO Collector Current — Continuous IC Limits –40 –40 –5 –200 Unit Vdc Vdc Vdc mAdc ●THERMAL CHARACTERISTICS Total Device Dissipation, PD 150 mW (Note 1) @ TA = 25°C Thermal Resistance, Junction–to–Ambient RΘJA 833 ℃/W Junction and Storage temperature TJ,Tstg −55∼+150 ℃ 1. Device mounted on FR4 glass epoxy printed circuit board using th...