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BTA410Y-600CT Dataheets PDF



Part Number BTA410Y-600CT
Manufacturers NXP
Logo NXP
Description 3Q Hi-Com Triac
Datasheet BTA410Y-600CT DatasheetBTA410Y-600CT Datasheet (PDF)

TO-220AB BTA410Y-600CT 3Q Hi-Com Triac 9 June 2014 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT78D (TO-220AB) internally insulated plastic package. This "series CT" triac will commutate the full RMS current at the maximum rated junction temperature (Tj(max) = 150 °C) without the aid of a snubber. It is used in applications where "high junction operating temperature capability" is required. 2. Features and benefits • 3Q technology .

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TO-220AB BTA410Y-600CT 3Q Hi-Com Triac 9 June 2014 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT78D (TO-220AB) internally insulated plastic package. This "series CT" triac will commutate the full RMS current at the maximum rated junction temperature (Tj(max) = 150 °C) without the aid of a snubber. It is used in applications where "high junction operating temperature capability" is required. 2. Features and benefits • 3Q technology for improved noise immunity • High commutation capability with maximum false trigger immunity • High immunity to false turn-on by dV/dt • High Tj(max) • Isolated mounting base with 2500 V (RMS) isolation • Less sensitive gate for high noise immunity • Planar passivated for voltage ruggedness and reliability • Triggering in three quadrants only 3. Applications • Electronic thermostats (heating and cooling) • Motor Controls • Rectifier-fed DC inductive loads e.g. DC motors and solenoids 4. Quick reference data Table 1. Symbol VDRM ITSM Tj IT(RMS) Quick reference data Parameter Conditions repetitive peak offstate voltage non-repetitive peak on- full sine wave; Tj(init) = 25 °C; state current tp = 20 ms; Fig. 4; Fig. 5 junction temperature RMS on-state current full sine wave; Tmb ≤ 120 °C; Fig. 1; Fig. 2; Fig. 3 Min Typ Max Unit - - 600 V - - 100 A - - 150 °C - - 10 A Scan or click this QR code to view the latest information for this product NXP Semiconductors BTA410Y-600CT 3Q Hi-Com Triac Symbol Parameter Conditions Static characteristics IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; Fig. 7 Dynamic characteristics dVD/dt rate of rise of off-state voltage VDM = 402 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit dIcom/dt rate of change of commutating current VD = 400 V; Tj = 150 °C; IT(RMS) = 10 A; dVcom/dt = 20 V/µs; (snubberless condition); gate open circuit Min Typ Max Unit 222- 35 mA 35 mA 35 mA 500 - - V/µs 8 - - A/ms 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 T1 main terminal 1 2 T2 main terminal 2 3 G gate mb n.c. mounting base; isolated Simplified outline mb Graphic symbol T2 sym051 T1 G 123 TO-220AB (SOT78D) 6. Ordering information Table 3. Ordering information Type number Package Name BTA410Y-600CT TO-220AB Description plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 Version SOT78D BTA410Y-600CT Product data sheet All information provided in this document is subject to legal disclaimers. 9 June 2014 © NXP Semiconductors N.V. 2014. All rights reserved 2 / 13 NXP Semiconductors BTA410Y-600CT 3Q Hi-Com Triac 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDRM repetitive peak off-st.


PTF102015 BTA410Y-600CT 2SK492


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