Document
TO-220AB
BTA410Y-600CT
3Q Hi-Com Triac
9 June 2014
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT78D (TO-220AB) internally insulated plastic package. This "series CT" triac will commutate the full RMS current at the maximum rated junction temperature (Tj(max) = 150 °C) without the aid of a snubber. It is used in applications where "high junction operating temperature capability" is required.
2. Features and benefits
• 3Q technology for improved noise immunity • High commutation capability with maximum false trigger immunity • High immunity to false turn-on by dV/dt • High Tj(max) • Isolated mounting base with 2500 V (RMS) isolation • Less sensitive gate for high noise immunity • Planar passivated for voltage ruggedness and reliability • Triggering in three quadrants only
3. Applications
• Electronic thermostats (heating and cooling) • Motor Controls • Rectifier-fed DC inductive loads e.g. DC motors and solenoids
4. Quick reference data
Table 1. Symbol VDRM
ITSM
Tj IT(RMS)
Quick reference data Parameter
Conditions
repetitive peak offstate voltage
non-repetitive peak on- full sine wave; Tj(init) = 25 °C;
state current
tp = 20 ms; Fig. 4; Fig. 5
junction temperature
RMS on-state current full sine wave; Tmb ≤ 120 °C; Fig. 1; Fig. 2; Fig. 3
Min Typ Max Unit - - 600 V
- - 100 A
- - 150 °C - - 10 A
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NXP Semiconductors
BTA410Y-600CT
3Q Hi-Com Triac
Symbol
Parameter
Conditions
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; Fig. 7
Dynamic characteristics
dVD/dt
rate of rise of off-state voltage
VDM = 402 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit
dIcom/dt
rate of change of commutating current
VD = 400 V; Tj = 150 °C; IT(RMS) = 10 A; dVcom/dt = 20 V/µs; (snubberless condition); gate open circuit
Min Typ Max Unit
222-
35 mA 35 mA 35 mA
500 - - V/µs 8 - - A/ms
5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 T1 main terminal 1 2 T2 main terminal 2 3 G gate mb n.c. mounting base; isolated
Simplified outline
mb
Graphic symbol
T2 sym051
T1 G
123
TO-220AB (SOT78D)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BTA410Y-600CT
TO-220AB
Description
plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220
Version SOT78D
BTA410Y-600CT
Product data sheet
All information provided in this document is subject to legal disclaimers.
9 June 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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NXP Semiconductors
BTA410Y-600CT
3Q Hi-Com Triac
7. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDRM
repetitive peak off-st.