PDTC114EU

DISCRETE SEMICONDUCTORS DATA SHEET PDTC114E series NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ Product specification Supersedes data of 2003 Apr 10 2004 Aug 05 Philips Semiconductors NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ Product specification PDTC114E series FEATURES Built-in bias resistors Simplified circuit design Reduction of component count Reduced pick and place costs. APPLICATIONS General purpose switching and amplification Inverter and interface circuits Circuit driver. QUICK REFERENCE DATA SYMBOL PARAMETER VCEO collector-emitter voltage IO output current (DC) R1 bias resistor R2 bias resistor TYP. − − 10 10 MAX. UNIT 50 V 100 mA − kΩ − kΩ DESCRIPTION NPN resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). PRODUCT OVERVIEW TYPE NUMBER PDTC114EE PDTC114EEF PDTC114EK PDTC114EM PDTC114ES PDTC114ET PDTC114EU PACKAGE PHILIPS EIAJ SOT416 SOT490 SOT346 SOT883 SOT54 (TO-92) SOT23 SOT323 SC-75 SC-89 SC-59 SC-101 SC-43 − SC-70 Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. MARKING CODE PNP COMPLEMENT 09 09 04 DS TC114E *16(1) *09(1) PDTA114EE PDTA114EEF PDTA114EK PDTA114EM PDTA114ES PDTA114ET PDTA114EU 2004 Aug 05 2 Philips Semiconductors NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ SIMPLIFIED OUTLINE, SYMBOL AND PINNING TYPE NUMBER PDTC114ES SIMPLIFIED OUTLINE AND SYMBOL handbook, halfpage 1 2 3 R1 1 R2 MAM364...