ZXMN10A08DN8

ZXMN10A08DN8 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 100V; RDS(ON) = 0.25 ID = 2.1A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistance Fast switching speed Low threshold Low gate drive Low profile SOIC package APPLICATIONS DC - DC converters Power management functions Disconnect switches Motor control ORDERING INFORMATION DEVICE REEL TAPE QUANTITY SIZE WIDTH PER REEL ZXMN10A08DN8TA 7” 12mm 500 units ZXMN10A08DN8TC 13” 12mm 2,500 units DEVICE MARKING ZXMN 10A08D SO8 PINOUT Top View ISSUE 4 - JANUARY 2005 1 SEMICONDUCTORS ZXMN10A08DN8 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-source voltage Gate source voltage Continuous drain current VGS=10V; VGS=10V; VGS=10V; TA=25°C TA=70°C TA=25°C (b) (b) (a) Pulsed drain current (c) Continuous source current (body diode) (b) Pulsed source current (body diode) (c) Power dissipation at TA=25°C (a) Linear derating factor Power dissipation at TA=25°C (b) Linear derating factor Operating and storage temperature range SYMBOL VDSS VGS ID IDM IS ISM PD PD Tj:Tstg LIMIT 100 20 2.1 1.7 1.6 9 2.6 9 1.25 10 1.8 14.5 -55 to +150 UNIT V V A A A A W mW/°C W mW/°C °C THERMAL RESISTANCE PARAMETER Junction to ambient (a) Junction to ambient (b) SYMBOL RθJA RθJA VALU...