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FSYC9160D

Part Number	FSYC9160D
Manufacturer	Intersil Corporation
Description	Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
Features	• 47A, -100V, rDS(ON) = 0.053Ω • Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si) • Single Event - Safe Operati...
Published	Mar 23, 2005
Datasheet	FSYC9160D PDF File

Features

• 47A, -100V, rDS(ON) = 0.053Ω
• Total Dose - Meets Pre-RAD Speciﬁcations to 100K RAD (Si)
• Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V...

Similar Datasheet

FSYC9160D Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs - Intersil Corporation
FSYC9160R Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs - Intersil Corporation

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