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BC858 Dataheets PDF



Part Number BC858
Manufacturers WEITRON
Logo WEITRON
Description General Purpose Transistor
Datasheet BC858 DatasheetBC858 Datasheet (PDF)

BC856A/B-BC857A/B/C BC858A/B/C-BC859B/C General Purpose Transistor PNP Silicon COLLECTOR 3 1 BASE 2 EMITTER Maximum Ratings ( TA=25 C unless otherwise noted) 3 1 2 SOT-23 MARKING DIAGRAM 3 XX = Device Code (See 1 2 Table Below) Rating Collector-Emitter Voltage BC856 BC857 BC858,BC859 Collector-Base Voltage BC856 BC857 BC858,BC859 Emitter-Base VOltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value -65 -45 -30 -80 -50 -30 -5.0 -100 Unit V V V mAdc Thermal Character.

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BC856A/B-BC857A/B/C BC858A/B/C-BC859B/C General Purpose Transistor PNP Silicon COLLECTOR 3 1 BASE 2 EMITTER Maximum Ratings ( TA=25 C unless otherwise noted) 3 1 2 SOT-23 MARKING DIAGRAM 3 XX = Device Code (See 1 2 Table Below) Rating Collector-Emitter Voltage BC856 BC857 BC858,BC859 Collector-Base Voltage BC856 BC857 BC858,BC859 Emitter-Base VOltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value -65 -45 -30 -80 -50 -30 -5.0 -100 Unit V V V mAdc Thermal Characteristics Characteristics Total Device Dissipation FR-5 Board (1) (Note 1.)TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (Note 2.) TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient Symbol PD R θJA PD R θJA Max 225 1.8 556 300 2.4 417 Unit mW mW/ C C/W mW mW/ C C/W Junction and Storage, Temperature TJ,Tstg -55 to +150 C 1.F R -5=1.0 x 0.75 x 0.062 in. 2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina. Electrical Characteristics (TA=25 C Unless Otherwise noted) Characteristics Symbol Min Typ Max Unit Off Characteristics Collector-Emitter Breakdown Voltage (IC= -10mA) BC856 Series BC857 Series V(BR)CEO -65 -45 - -V - BC858, BC859 Series -30 - - Collector-Emitter Breakdown Voltage (IC=-10 µA ,VEB=0) BC856 Series BC857 Series V(BR)CES -80 -50 - -V - BC858, BC859 Series -30 - - Collector-Base Breakdown Voltage (IC=-10 µA) BC856 Series BC857 Series V(BR)CBO -80 -50 - -V - BC858, BC859 Series -30 - - Emitter-Base Breakdown Voltage (IE=-1.0 µA) BC856 Series BC857 Series BC858, BC859 Series V(BR)EBO -5.0 -5.0 -5.0 - -V --- Collector Cutoff Current (VCB=-30V) (VCB=-30V, TA=150 C) ICBO - - -15 nA - -4.0 mA WEITRON http://www.weitron.com.tw 1/4 Rev A 12-Apr-05 BC856A/B-BC857A/B/C BC858A/B/C-BC859B/C Electrical Characteristics (TA=25 C Unless Otherwise noted) Characteristics Symbol On Characteristics DC Current Gain (IC= -10uA, VCE=-5.0V) BC856A, BC857A, BC858A BC856B, BC857B, BC858B BC858C (IC= -2.0mA,VCE=-5.0V) BC856A, BC857A, BC858A BC856B, BC857B, BC858B, BC859B BC857C, BC858C, BC859C Collector-Emitter Saturation Voltage (IC= -10mA, IB=-0.5mA) (IC= -100mA, IB=-5.0mA) Base-Emitter Saturation Voltage (IC= -10mA, IB=-0.5mA) (IC= -100mA, IB=-5.0mA) Base-Emitter On Voltage (IC= -10mA, IB=-0.5mA) (IC= -100mA, IB=-5.0mA) hFE VCE(sat) VBE(sat) VBE(on) Small-signal Characteristics Current-Gain-Bandwidth Product (IC= -10mA, VCE= -5.0VDC, f=100MHz) Output Capacitance (VCB= -10V, f=1.0MHz) Noise Figure (IC= -0.2mA, VCE= -5.0Vdc, Rs=2.0kΩ, f=1.0kHz, BW=200Hz) BC856, BC857, BC858 Series BC859, Series fT Cobo NF Device Marking BC856A=3A; BC856B=3B; BC857A=3E; BC857B=3F; BC857C=3G BC858A=3J; C858B=3K; BC858C=3L; BC859B=4B; BC859C=4C Min 125 220 420 - -0.6 - 100 - - WE ITR ON Typ Max Unit 90 150 270 180 250 290 475 520 800 - -0.3 - -0.65 -0.7 -0.9 - - -0.75 - -0.82 - V V V - - MHz - 4.5 pF dB - 10 - 4.0 WEITRON http://www.weitron.com.tw .


BC857 BC858 BC859


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