Document
BC856A/B-BC857A/B/C BC858A/B/C-BC859B/C
General Purpose Transistor PNP Silicon
COLLECTOR 3
1 BASE
2 EMITTER
Maximum Ratings ( TA=25 C unless otherwise noted)
3
1 2
SOT-23
MARKING DIAGRAM 3
XX = Device Code (See 1 2 Table Below)
Rating
Collector-Emitter Voltage
BC856
BC857
BC858,BC859
Collector-Base Voltage
BC856
BC857
BC858,BC859
Emitter-Base VOltage
Collector Current-Continuous
Symbol VCEO
VCBO VEBO
IC
Value -65 -45 -30 -80 -50 -30 -5.0
-100
Unit V
V V mAdc
Thermal Characteristics
Characteristics Total Device Dissipation FR-5 Board (1) (Note 1.)TA=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient
Total Device Dissipation Alumina Substrate, (Note 2.) TA=25 C Derate above 25 C
Thermal Resistance, Junction to Ambient
Symbol PD
R θJA
PD R θJA
Max
225 1.8 556
300 2.4 417
Unit
mW mW/ C
C/W
mW mW/ C
C/W
Junction and Storage, Temperature
TJ,Tstg
-55 to +150
C
1.F R -5=1.0 x 0.75 x 0.062 in. 2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina.
Electrical Characteristics (TA=25 C Unless Otherwise noted)
Characteristics
Symbol
Min
Typ Max
Unit
Off Characteristics
Collector-Emitter Breakdown Voltage (IC= -10mA)
BC856 Series BC857 Series
V(BR)CEO
-65 -45
-
-V -
BC858, BC859 Series
-30 - -
Collector-Emitter Breakdown Voltage (IC=-10 µA ,VEB=0)
BC856 Series BC857 Series
V(BR)CES
-80 -50
-
-V -
BC858, BC859 Series
-30 - -
Collector-Base Breakdown Voltage (IC=-10 µA)
BC856 Series BC857 Series
V(BR)CBO
-80 -50
-
-V -
BC858, BC859 Series
-30 - -
Emitter-Base Breakdown Voltage (IE=-1.0 µA)
BC856 Series BC857 Series BC858, BC859 Series
V(BR)EBO
-5.0 -5.0 -5.0
- -V ---
Collector Cutoff Current (VCB=-30V) (VCB=-30V, TA=150 C)
ICBO
-
- -15 nA - -4.0 mA
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1/4 Rev A 12-Apr-05
BC856A/B-BC857A/B/C BC858A/B/C-BC859B/C
Electrical Characteristics (TA=25 C Unless Otherwise noted)
Characteristics
Symbol
On Characteristics
DC Current Gain (IC= -10uA, VCE=-5.0V)
BC856A, BC857A, BC858A BC856B, BC857B, BC858B BC858C
(IC= -2.0mA,VCE=-5.0V)
BC856A, BC857A, BC858A BC856B, BC857B, BC858B, BC859B BC857C, BC858C, BC859C
Collector-Emitter Saturation Voltage (IC= -10mA, IB=-0.5mA) (IC= -100mA, IB=-5.0mA)
Base-Emitter Saturation Voltage (IC= -10mA, IB=-0.5mA) (IC= -100mA, IB=-5.0mA)
Base-Emitter On Voltage (IC= -10mA, IB=-0.5mA) (IC= -100mA, IB=-5.0mA)
hFE
VCE(sat) VBE(sat) VBE(on)
Small-signal Characteristics
Current-Gain-Bandwidth Product (IC= -10mA, VCE= -5.0VDC, f=100MHz) Output Capacitance (VCB= -10V, f=1.0MHz) Noise Figure (IC= -0.2mA, VCE= -5.0Vdc, Rs=2.0kΩ, f=1.0kHz, BW=200Hz)
BC856, BC857, BC858 Series BC859, Series
fT Cobo
NF
Device Marking
BC856A=3A; BC856B=3B; BC857A=3E; BC857B=3F; BC857C=3G BC858A=3J; C858B=3K; BC858C=3L; BC859B=4B; BC859C=4C
Min
125 220 420 -
-0.6 -
100 -
-
WE ITR ON
Typ Max
Unit
90 150 270 180 250 290 475 520 800
- -0.3 - -0.65
-0.7 -0.9 -
- -0.75 - -0.82
-
V V V
- - MHz
- 4.5 pF dB
- 10 - 4.0
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