Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Description
FSYC260D, FSYC260R
July 1998
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
Description
The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR...
