FSYC055D

FSYC055D, FSYC055R July 1998 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed. The Intersil portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings. Numerous packaging options are also available. This MOSFET is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converters, motor drives, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits. PART NO./BRAND FSYC055D1 FSYC055D3 FSYC055R1 FSYC055R3 FSYC055R4 D Features 70A (Note), 60V, rDS(ON) = 0.012Ω Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) Single E...