LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
●FEATURES 1) We declare that the material of product...
LESHAN RADIO COMPANY, LTD.
General Purpose
Transistors
PNP Silicon
●FEATURES 1) We declare that the material of product compliant with
RoHS requirements and Halogen Free. 2) S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
●DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LMBT2907ALT1G
2F
3000/Tape&Reel
LMBT2907ALT3G
2F
10000/Tape&Reel
LMBT2907ALT1G S-LMBT2907ALT1G
3
1 2
SOT-23
●MAXIMUM RATINGS(Ta = 25℃)
Parameter Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous
Symbol VCEO VCBO VEBO
IC
Limits –60 –60 –5 –600
Unit Vdc Vdc Vdc mAdc
●THERMAL CHARACTERISTICS Total Device Dissipation,
FR−5 Board (Note 1) @ TA = 25°C Derate above 25°C Thermal Resistance, Junction–to–Ambient(Note 1) Total Device Dissipation, Alumina Substrate (Note 2) @ TA = 25°C Derate above 25°C Thermal Resistance, Junction–to–Ambient(Note 2) Junction and Storage temperature
1. FR–5 = 1.0×0.75×0.062 in.
2. Alumina = 0.4×0.3×0.024 in. 99.5% alumina.
PD RΘJA
225 mW 1.8 mW/℃ 556 ℃/W
PD RΘJA
300 mW 2.4 mW/℃ 417 ℃/W
TJ,Tstg −55∼+150
℃
June,2015
Rev.A 1/5
LESHAN RADIO COMPANY, LTD.
LMBT2907ALT1G,S-LMBT2907ALT1G
●ELECTRICAL CHARACTERISTICS (Ta= 25℃) OFF CHARACTERISTICS
Characteristic Collector–Emitter Breakdown Voltage (IC = –10 mAdc, I B = 0) Collector–Base Breakdown Voltage (I C = –10 μAdc, I E = 0) Emitter–Base Breakdown Voltage (I E ...