LMBT4403LT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon We declare that the material of product compliance with RoHS requirements. S - Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ORDERING INFORMATION Device LMBT4403LT1G S-LMBT4403LT1G SLM-LBMTB4T440430L3TL3TG3 Marking Shipping 2T 3000/Tape & Reel 2T 10000/Tape & Reel MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol V CEO V CBO V EBO IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR –5 Board (1) T A =25 °C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate (2) T A = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD R θJA PD R θJA T J , T stg Value – 40 – 40 – 5.0 – 600 Unit Vdc Vdc Vdc mAdc Max Unit 225 mW 1.8 mW/°C 556 °C/W 300 mW 2.4 417 –55 to +150 mW/°C °C/W °C LMBT4403LT1G S-LMBT4403LT1G 3 1 2 SOT– 23 (TO–236AB) 1 BASE 3 COLLECTOR 2 EMITTER DEVICE MARKING LMBT4403LT1G = 2T ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic Symbol OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (3) (I C = –1.0 mAdc, I B = 0) Collector–Base Breakdown Voltage (I C = –0.1mAdc, I E = 0) Emitter–Base Breakdown Voltage (I E = –0.1mAdc, I C = 0) Base Cutoff Current (V CE = –35 V...