LMBT4401LT3G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon ●FEATURES 1) We declare that the material of product compliant with RoHS requirements and Halogen Free. 2) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ●DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT4401LT1G 2X 3000/Tape&Reel LMBT4401LT3G 2X 10000/Tape&Reel LMBT4401LT1G S-LMBT4401LT1G 3 1 2 SOT-23 ●MAXIMUM RATINGS(Ta = 25℃) Parameter Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Limits 40 60 6 600 Unit Vdc Vdc Vdc mAdc ●THERMAL CHARACTERISTICS Total Device Dissipation, FR−5 Board (Note 1) @ TA = 25°C Derate above 25°C Thermal Resistance, Junction–to–Ambient(Note 1) Total Device Dissipation, Alumina Substrate (Note 2) @ TA = 25°C Derate above 25°C Thermal Resistance, Junction–to–Ambient(Note 2) Junction and Storage temperature 1. FR–5 = 1.0×0.75×0.062 in. 2. Alumina = 0.4×0.3×0.024 in. 99.5% alumina. PD RΘJA 225 mW 1.8 mW/℃ 556 ℃/W PD RΘJA 300 mW 2.4 mW/℃ 417 ℃/W TJ,Tstg −55∼+150 ℃ June,2015 Rev.A 1/5 LESHAN RADIO COMPANY, LTD. LMBT4401LT1G,S-LMBT4401LT1G ●ELECTRICAL CHARACTERISTICS (Ta= 25℃) OFF CHARACTERISTICS Characteristic Collector–Emitter Breakdown Voltage (IC = 1.0 mAdc, I B = 0) Collector–Base Breakdown Voltage Symbol VBR(CEO) VBR(CBO) (I C = 0.1mAdc, I E = 0) Emitter–Base Breakdo...