LMBT3906LT3G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. LMBT3906LT1G S-LMBT3906LT1G ORDERING INFORMATION Device Marking LMBT3906LT1G S-LMBT3906LT1G LMBT3906LT3G S-LMBT3906LT3G 2A 2A 2A 2A Shipping 3000/Tape & Reel 10000/Tape & Reel MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol V CEO V CBO V EBO IC THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) T A =25 °C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) T A = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol PD RθJA PD R θJA T J , T stg DEVICE MARKING LMBT3906LT1G = 2A Value – 40 – 40 – 5.0 – 200 Unit Vdc Vdc Vdc mAdc Max Unit 225 mW 1.8 mW/°C 556 °C/W 300 mW 2.4 417 –55 to +150 mW/°C °C/W °C 3 1 2 SOT– 23 (TO–236AB) 1 BASE 3 COLLECTOR 2 EMITTER ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic Symbol OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (3) (I C = –1.0 mAdc, I B = 0) Collector–Base Breakdown Voltage (I C = –10 µAdc, I E = 0) Emitter–Base Breakdown Voltage (I E = –10 µAdc, I C = 0) Base Cutoff Current (V C...